CSD19536KCS

Specifications

Yükseklik

4.7mm

Drive Voltage Max Rds On Min Rds On

6V 10V

Fall Time Typ

5 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Number Of Channels

1

Temel Parça No

CSD19536

Power Dissipation Max

375W Tc

Kurşunsuz

Lead Free

Montaj Tipi

Through Hole

Terminal Sayısı

3

Threshold Voltage

2.5V

Element Configuration

Single

Vgsth Max Id

3.2V @ 250μA

Pin Sayısı

3

JESD-609 Kodu

e3

Pulsed Drain Currentmax Idm

400A

Genişlik

8.7mm

Kurşunsuz Kodu

yes

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Fet Type

N-Channel

Additional Feature

AVALANCHE RATED

Weight

6.000006g

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

Montaj

Through Hole

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Seri

NexFET™

Thickness

4.58mm

Rds On Max Id Vgs

2.7m Ω @ 100A, 10V

Current Continuous Drain Id25

150A Ta

Input Capacitance Ciss Max Vds

12000pF @ 50V

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Drain To Source Breakdown Voltage

100V

Reach Svhc

No SVHC

Parça Durumu

Active

Avalanche Energy Rating Eas

806 mJ