CSD19535KTT

Specifications

Contact Plating

Tin

Avalanche Energy Rating Eas

451 mJ

Number Of Elements

1

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

200A Ta

Rds On Max Id Vgs

3.4m Ω @ 100A, 10V

Input Capacitance Ciss Max Vds

7930pF @ 50V

Thickness

4.44mm

Seri

NexFET™

Vgs Max

±20V

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Drainsource On Resistancemax

0.0041Ohm

Turn Off Delay Time

21 ns

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

6 Weeks

Kılıf / Paket

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Gate Charge Qg Max Vgs

98nC @ 10V

Rise Time

18ns

Continuous Drain Current Id

200A

Case Connection

DRAIN

Ambalaj

Tape & Reel (TR)

REACH Uyumluluk Kodu

not_compliant

Turn On Delay Time

9 ns

Uzunluk

10.18mm

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Ds Breakdown Voltagemin

100V

Kurşunsuz

Contains Lead

Montaj Tipi

Surface Mount

Power Dissipation Max

300W Tc

Temel Parça No

CSD19535

Fall Time Typ

15 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Drive Voltage Max Rds On Min Rds On

6V 10V

Yükseklik

4.83mm

ECCN Kodu

EAR99

Additional Feature

AVALANCHE RATED

Terminal Formu

GULL WING