CSD19535KCS

Specifications

Contact Plating

Tin

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Reach Svhc

No SVHC

Drain To Source Breakdown Voltage

100V

Parça Durumu

Active

Number Of Elements

1

Seri

NexFET™

Thickness

4.58mm

Input Capacitance Ciss Max Vds

7930pF @ 50V

Rds On Max Id Vgs

3.6m Ω @ 100A, 10V

Current Continuous Drain Id25

150A Ta

Gate To Source Voltage Vgs

20V

Montaj

Through Hole

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgs Max

±20V

Turn Off Delay Time

60 ns

Drainsource On Resistancemax

0.0044Ohm

Rise Time

15ns

Gate Charge Qg Max Vgs

101nC @ 10V

Kılıf / Paket

TO-220-3

Fabrika Tedarik Süresi

6 Weeks

Transistor Element Material

SILICON

Ambalaj

Tube

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Case Connection

DRAIN

Continuous Drain Current Id

150A

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Uzunluk

10.16mm

Turn On Delay Time

32 ns

REACH Uyumluluk Kodu

not_compliant

Temel Parça No

CSD19535

Power Dissipation Max

300W Tc

Kurşunsuz

Lead Free

Montaj Tipi

Through Hole

Number Of Channels

1

Drive Voltage Max Rds On Min Rds On

6V 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Fall Time Typ

5 ns

Yükseklik

4.7mm