CSD19534Q5AT

Specifications

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

±20V

Thickness

1mm

Seri

NexFET™

Input Capacitance Ciss Max Vds

1680pF @ 50V

Current Continuous Drain Id25

50A Ta

Rds On Max Id Vgs

15.1m Ω @ 10A, 10V

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Reach Svhc

No SVHC

Drain To Source Breakdown Voltage

100V

Number Of Elements

1

Terminal Pozisyonu

DUAL

Contact Plating

Tin

Avalanche Energy Rating Eas

55 mJ

Uzunluk

4.9mm

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

REACH Uyumluluk Kodu

not_compliant

Turn On Delay Time

9 ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Case Connection

DRAIN

Continuous Drain Current Id

44A

Gate Charge Qg Max Vgs

22nC @ 10V

Rise Time

14ns

Kılıf / Paket

8-PowerTDFN

Fabrika Tedarik Süresi

6 Weeks

Transistor Element Material

SILICON

Turn Off Delay Time

20 ns

Yükseklik

1.1mm

Drive Voltage Max Rds On Min Rds On

6V 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

6 ns

Number Of Channels

1

Temel Parça No

CSD19534

Kurşunsuz

Contains Lead

Montaj Tipi

Surface Mount