CSD19533KCS

Specifications

Input Capacitance Ciss Max Vds

2670pF @ 50V

Rds On Max Id Vgs

10.5m Ω @ 55A, 10V

Current Continuous Drain Id25

100A Ta

Seri

NexFET™

Thickness

4.58mm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgs Max

±20V

Gate To Source Voltage Vgs

20V

Montaj

Through Hole

Contact Plating

Tin

Drain To Source Breakdown Voltage

100V

Reach Svhc

No SVHC

Parça Durumu

Active

Number Of Elements

1

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Continuous Drain Current Id

100A

Ambalaj

Tube

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Case Connection

DRAIN

REACH Uyumluluk Kodu

not_compliant

Turn On Delay Time

7 ns

Lifecycle Status

ACTIVE (Last Updated: 6 days ago)

Uzunluk

10.16mm

Turn Off Delay Time

12 ns

Fabrika Tedarik Süresi

6 Weeks

Transistor Element Material

SILICON

Rise Time

5ns

Gate Charge Qg Max Vgs

35nC @ 10V

Kılıf / Paket

TO-220-3

Çalışma Sıcaklığı

-55°C~175°C TJ

Fall Time Typ

2 ns

Drive Voltage Max Rds On Min Rds On

6V 10V

Yükseklik

4.7mm

Power Dissipation Max

188W Tc

Montaj Tipi

Through Hole

Kurşunsuz

Lead Free

Temel Parça No

CSD19533

Number Of Channels

1

Nem Hassasiyeti (MSL)

1 (Unlimited)