CSD19532Q5B

Specifications

Yükseklik

1.05mm

Fall Time Typ

6 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

6V 10V

Number Of Channels

1

Power Dissipation Max

3.1W Ta 195W Tc

Montaj Tipi

Surface Mount

Kurşunsuz

Contains Lead

Temel Parça No

CSD19532

Vgsth Max Id

3.2V @ 250μA

Pin Sayısı

8

Terminal Sayısı

5

Threshold Voltage

2.6V

Element Configuration

Single

Genişlik

6mm

Kurşunsuz Kodu

yes

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

JESD-609 Kodu

e3

Pulsed Drain Currentmax Idm

400A

Power Dissipation

3.1W

Terminal Formu

NO LEAD

Fet Type

N-Channel

Max Junction Temperature Tj

150°C

ECCN Kodu

EAR99

Additional Feature

AVALANCHE RATED

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

260

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Rds On Max Id Vgs

4.9m Ω @ 17A, 10V

Current Continuous Drain Id25

100A Ta

Input Capacitance Ciss Max Vds

4810pF @ 50V

Seri

NexFET™

Thickness

950μm

Terminal Pozisyonu

DUAL

Number Of Elements

1

Drain To Source Breakdown Voltage

100V

Reach Svhc

No SVHC

Parça Durumu

Active