CSD19502Q5BT

Specifications

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Case Connection

DRAIN

Continuous Drain Current Id

100A

Uzunluk

5mm

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

REACH Uyumluluk Kodu

not_compliant

Gate Charge Qg Max Vgs

62nC @ 10V

Terminal Kaplaması

Matte Tin (Sn)

Kılıf / Paket

8-PowerTDFN

Fabrika Tedarik Süresi

6 Weeks

Transistor Element Material

SILICON

Thickness

950μm

Seri

NexFET™

Input Capacitance Ciss Max Vds

4870pF @ 40V

Current Continuous Drain Id25

100A Ta

Rds On Max Id Vgs

4.1m Ω @ 19A, 10V

Montaj

Surface Mount

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

±20V

Avalanche Energy Rating Eas

274 mJ

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Reach Svhc

No SVHC

Number Of Elements

1

Terminal Pozisyonu

DUAL

Pulsed Drain Currentmax Idm

400A

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Genişlik

6mm

Threshold Voltage

2.7V

Element Configuration

Single

Drain To Source Voltage Vdss

80V

Terminal Sayısı

5

Pin Sayısı

8

Vgsth Max Id

3.3V @ 250μA

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE