CSD19501KCS

Specifications

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tube

Case Connection

DRAIN

Continuous Drain Current Id

100A

Uzunluk

10.16mm

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Turn On Delay Time

21 ns

REACH Uyumluluk Kodu

not_compliant

Turn Off Delay Time

39 ns

Drainsource On Resistancemax

0.0079Ohm

Gate Charge Qg Max Vgs

50nC @ 10V

Rise Time

15ns

Kılıf / Paket

TO-220-3

Fabrika Tedarik Süresi

16 Weeks

Transistor Element Material

SILICON

Thickness

4.58mm

Seri

NexFET™

Input Capacitance Ciss Max Vds

3980pF @ 40V

Current Continuous Drain Id25

100A Ta

Rds On Max Id Vgs

6.6m Ω @ 60A, 10V

Montaj

Through Hole

Gate To Source Voltage Vgs

20V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgs Max

±20V

Contact Plating

Tin

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Drain To Source Breakdown Voltage

80V

Reach Svhc

No SVHC

Number Of Elements

1

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Genişlik

8.7mm

Element Configuration

Single

Threshold Voltage

2.6V

Terminal Sayısı

3

Vgsth Max Id

3.2V @ 250μA