CSD18563Q5A

Specifications

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

±20V

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

1500pF @ 30V

Current Continuous Drain Id25

100A Ta

Rds On Max Id Vgs

6.8m Ω @ 18A, 10V

Thickness

1mm

Seri

NexFET™

Parça Durumu

Active

Reach Svhc

No SVHC

Drain To Source Breakdown Voltage

60V

Number Of Elements

1

Terminal Pozisyonu

DUAL

Nominal Vgs

2 V

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Contact Plating

Tin

REACH Uyumluluk Kodu

not_compliant

Turn On Delay Time

3.2 ns

Uzunluk

4.9mm

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Continuous Drain Current Id

15A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Case Connection

DRAIN

Fabrika Tedarik Süresi

8 Weeks

Transistor Element Material

SILICON

Gate Charge Qg Max Vgs

20nC @ 10V

Rise Time

6.3ns

Kılıf / Paket

8-PowerTDFN

Turn Off Delay Time

11.4 ns

Yükseklik

1.1mm

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

1.7 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Number Of Channels

1

Kurşunsuz

Contains Lead

Montaj Tipi

Surface Mount

Power Dissipation Max

3.2W Ta 116W Tc