CSD18543Q3AT

Specifications

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Terminal Pozisyonu

DUAL

Parça Durumu

Active

Drain To Source Breakdown Voltage

60V

Avalanche Energy Rating Eas

55 mJ

Gate To Source Voltage Vgs

20V

Vgs Max

±20V

Thickness

800μm

Seri

NexFET™

Current Continuous Drain Id25

12A Ta 60A Tc

Rds On Max Id Vgs

15.6m Ω @ 12A, 4.5V

Input Capacitance Ciss Max Vds

1150pF @ 30V

Kılıf / Paket

8-PowerVDFN

Gate Charge Qg Max Vgs

14.5nC @ 10V

Terminal Kaplaması

Matte Tin (Sn)

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

6 Weeks

Turn Off Delay Time

8 ns

Uzunluk

3.3mm

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Turn On Delay Time

9 ns

Case Connection

DRAIN

Ambalaj

Tape & Reel (TR)

Continuous Drain Current Id

12A

Number Of Channels

1

Yüzey Montaj

YES

Temel Parça No

CSD18543

Montaj Tipi

Surface Mount

Power Dissipation Max

66W Tc

Yükseklik

900μm

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Formu

FLAT

Max Junction Temperature Tj

150°C

Fet Type

N-Channel

Additional Feature

AVALANCHE RATED

Feedback Capmax Crss

6.2 pF

Terminal Sayısı

5