CSD18537NQ5AT

Specifications

Contact Plating

Tin

Avalanche Energy Rating Eas

55 mJ

Parça Durumu

Active

Reach Svhc

No SVHC

Drain To Source Breakdown Voltage

60V

Number Of Elements

1

Terminal Pozisyonu

DUAL

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

1480pF @ 30V

Current Continuous Drain Id25

50A Ta

Rds On Max Id Vgs

13m Ω @ 12A, 10V

Thickness

1mm

Seri

NexFET™

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

±20V

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

14.4 ns

Fabrika Tedarik Süresi

6 Weeks

Transistor Element Material

SILICON

Gate Charge Qg Max Vgs

18nC @ 10V

Rise Time

4ns

Kılıf / Paket

8-PowerTDFN

Continuous Drain Current Id

50A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Case Connection

DRAIN

REACH Uyumluluk Kodu

not_compliant

Turn On Delay Time

5.8 ns

Uzunluk

4.9mm

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Kurşunsuz

Contains Lead

Montaj Tipi

Surface Mount

Power Dissipation Max

3.2W Ta 75W Tc

Temel Parça No

CSD18537

Number Of Channels

1

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

3.2 ns

Drive Voltage Max Rds On Min Rds On

6V 10V