CSD18536KTTT

Specifications

Seri

NexFET™

Thickness

4.44mm

Rds On Max Id Vgs

1.6m Ω @ 100A, 10V

Current Continuous Drain Id25

200A Ta 349A Tc

Input Capacitance Ciss Max Vds

11430pF @ 30V

Montaj

Surface Mount

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

260

Avalanche Energy Rating Eas

819 mJ

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

Non-RoHS Compliant

Number Of Elements

1

Reach Svhc

No SVHC

Parça Durumu

Active

Case Connection

DRAIN

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Continuous Drain Current Id

349A

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Uzunluk

10.18mm

Ds Breakdown Voltagemin

60V

REACH Uyumluluk Kodu

not_compliant

Drainsource On Resistancemax

0.0022Ohm

Kılıf / Paket

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Terminal Kaplaması

Matte Tin (Sn)

Gate Charge Qg Max Vgs

140nC @ 10V

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

6 Weeks

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Yükseklik

4.83mm

Temel Parça No

CSD18536

Power Dissipation Max

375W Tc

Kurşunsuz

Contains Lead

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Pulsed Drain Currentmax Idm

400A

Genişlik

8.41mm

Kurşunsuz Kodu

yes

Nem Hassasiyeti (MSL)

2 (1 Year)