CSD18536KTT

Specifications

Avalanche Energy Rating Eas

819 mJ

Number Of Elements

1

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Rds On Max Id Vgs

1.6m Ω @ 100A, 10V

Current Continuous Drain Id25

200A Ta

Input Capacitance Ciss Max Vds

11430pF @ 30V

Seri

NexFET™

Thickness

4.44mm

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

260

Montaj

Surface Mount

Drainsource On Resistancemax

0.0022Ohm

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

12 Weeks

Kılıf / Paket

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Terminal Kaplaması

Matte Tin (Sn)

Gate Charge Qg Max Vgs

140nC @ 10V

Continuous Drain Current Id

200A

Case Connection

DRAIN

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

REACH Uyumluluk Kodu

not_compliant

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Uzunluk

10.18mm

Ds Breakdown Voltagemin

60V

Power Dissipation Max

375W Tc

Montaj Tipi

Surface Mount

Kurşunsuz

Contains Lead

Temel Parça No

CSD18536

Çalışma Sıcaklığı

-55°C~175°C TJ

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Yükseklik

4.83mm

ECCN Kodu

EAR99

Feedback Capmax Crss

51 pF

Additional Feature

AVALANCHE RATED

Terminal Formu

GULL WING

Fet Type

N-Channel

Genişlik

8.41mm