CSD18535KTTT

Specifications

Terminal Kaplaması

Matte Tin (Sn)

Gate Charge Qg Max Vgs

81nC @ 10V

Kılıf / Paket

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Fabrika Tedarik Süresi

6 Weeks

Transistor Element Material

SILICON

Drainsource On Resistancemax

0.0029Ohm

Ds Breakdown Voltagemin

60V

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Uzunluk

10.18mm

REACH Uyumluluk Kodu

not_compliant

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Case Connection

DRAIN

Continuous Drain Current Id

279A

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Reach Svhc

No SVHC

Parça Durumu

Active

Number Of Elements

1

Avalanche Energy Rating Eas

616 mJ

Montaj

Surface Mount

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

±20V

Seri

NexFET™

Thickness

4.44mm

Input Capacitance Ciss Max Vds

6620pF @ 30V

Rds On Max Id Vgs

2m Ω @ 100A, 10V

Current Continuous Drain Id25

200A Ta 279A Tc

Fet Type

N-Channel

Terminal Formu

GULL WING

Additional Feature

AVALANCHE RATED

Drain Currentmax Abs Id

200A

Drain To Source Voltage Vdss

60V

Element Configuration

Single

Threshold Voltage

1.9V

Terminal Sayısı

3

Pin Sayısı

3

Vgsth Max Id

2.4V @ 250μA

Pulsed Drain Currentmax Idm

400A

JESD-609 Kodu

e3