CSD18535KCS

Specifications

Continuous Drain Current Id

200A

Ambalaj

Tube

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pin Sayısı

3

Case Connection

DRAIN

Turn On Delay Time

9 ns

REACH Uyumluluk Kodu

not_compliant

Ds Breakdown Voltagemin

60V

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Uzunluk

10.16mm

Turn Off Delay Time

19 ns

Drainsource On Resistancemax

0.0029Ohm

Fabrika Tedarik Süresi

12 Weeks

Transistor Element Material

SILICON

Rise Time

3ns

Terminal Kaplaması

Matte Tin (Sn)

Gate Charge Qg Max Vgs

81nC @ 10V

Kılıf / Paket

TO-220-3

Input Capacitance Ciss Max Vds

6620pF @ 30V

Rds On Max Id Vgs

2m Ω @ 100A, 10V

Current Continuous Drain Id25

200A Ta

Seri

NexFET™

Thickness

4.58mm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgs Max

±20V

Gate To Source Voltage Vgs

20V

Montaj

Through Hole

Contact Plating

Copper, Tin

Avalanche Energy Rating Eas

616 mJ

Parça Durumu

Active

Number Of Elements

1

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Genişlik

8.7mm

Kurşunsuz Kodu

yes

Pulsed Drain Currentmax Idm

400A

JESD-609 Kodu

e3

Pin Sayısı

3