CSD18534Q5AT

Specifications

Turn Off Delay Time

15 ns

Drainsource On Resistancemax

0.0124Ohm

Fabrika Tedarik Süresi

8 Weeks

Transistor Element Material

SILICON

Gate Charge Qg Max Vgs

11.1nC @ 4.5V

Rise Time

5.5ns

Kılıf / Paket

8-PowerTDFN

Continuous Drain Current Id

69A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Case Connection

DRAIN

Turn On Delay Time

5.2 ns

REACH Uyumluluk Kodu

not_compliant

Ds Breakdown Voltagemin

60V

Uzunluk

4.9mm

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Contact Plating

Tin

Parça Durumu

Active

Number Of Elements

1

Terminal Pozisyonu

DUAL

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

1770pF @ 30V

Current Continuous Drain Id25

50A Ta

Rds On Max Id Vgs

9.8m Ω @ 14A, 10V

Thickness

1mm

Seri

NexFET™

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

±20V

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Feedback Capmax Crss

6.5 pF

Drain Currentmax Abs Id

13A

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Fet Type

N-Channel

Terminal Formu

NO LEAD

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Genişlik

6mm