CSD18532Q5B

Specifications

Drainsource On Resistancemax

0.0043Ohm

Turn Off Delay Time

22 ns

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

8 Weeks

Kılıf / Paket

8-PowerTDFN

Rise Time

7.2ns

Gate Charge Qg Max Vgs

58nC @ 10V

Continuous Drain Current Id

23A

Case Connection

DRAIN

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

REACH Uyumluluk Kodu

not_compliant

Turn On Delay Time

5.8 ns

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Uzunluk

5mm

Contact Plating

Tin

Avalanche Energy Rating Eas

320 mJ

Terminal Pozisyonu

DUAL

Number Of Elements

1

Reach Svhc

No SVHC

Drain To Source Breakdown Voltage

60V

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Rds On Max Id Vgs

3.2m Ω @ 25A, 10V

Current Continuous Drain Id25

100A Ta

Input Capacitance Ciss Max Vds

5070pF @ 30V

Seri

NexFET™

Thickness

950μm

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

260

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

ECCN Kodu

EAR99

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Terminal Formu

NO LEAD

Fet Type

N-Channel

Max Junction Temperature Tj

150°C

Genişlik

6mm

Kurşunsuz Kodu

yes