Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- 8-PowerTDFN
- Gate Charge Qg Max Vgs
- 64nC @ 10V
- Rise Time
- 8.7ns
- Transistor Element Material
- SILICON
- Fabrika Tedarik Süresi
- 6 Weeks
- Radyasyon Dayanımı
- No
- Drainsource On Resistancemax
- 0.0044Ohm
- Turn Off Delay Time
- 20 ns
- Uzunluk
- 5mm
- Lifecycle Status
- ACTIVE (Last Updated: 5 days ago)
- Turn On Delay Time
- 8.2 ns
- Case Connection
- DRAIN
- Ambalaj
- Tape & Reel (TR)
- Continuous Drain Current Id
- 100A
- RoHS Durumu
- ROHS3 Compliant
- Operating Mode
- ENHANCEMENT MODE
- Number Of Elements
- 1
- Terminal Pozisyonu
- DUAL
- Parça Durumu
- Active
- Drain To Source Breakdown Voltage
- 60V
- Contact Plating
- Tin
- Avalanche Energy Rating Eas
- 360 mJ
- Montaj
- Surface Mount
- Gate To Source Voltage Vgs
- 20V
- Vgs Max
- ±20V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Thickness
- 950μm
- Seri
- NexFET™
- Current Continuous Drain Id25
- 22A Ta 100A Tc
- Rds On Max Id Vgs
- 3.4m Ω @ 25A, 10V
- Input Capacitance Ciss Max Vds
- 5340pF @ 30V
- Fet Type
- N-Channel
- Additional Feature
- AVALANCHE RATED
- Drain Currentmax Abs Id
- 22A
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 5
- Element Configuration
- Single
- Vgsth Max Id
- 3.4V @ 250μA
- Pin Sayısı
- 8
- JESD-609 Kodu
- e3
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