CSD18531Q5AT

Specifications

Contact Plating

Tin

Avalanche Energy Rating Eas

224 mJ

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Terminal Pozisyonu

DUAL

Parça Durumu

Active

Thickness

1mm

Seri

NexFET™

Current Continuous Drain Id25

100A Ta

Rds On Max Id Vgs

4.6m Ω @ 22A, 10V

Input Capacitance Ciss Max Vds

3840pF @ 30V

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

260

Direnç

3.5mOhm

Turn Off Delay Time

20 ns

Kılıf / Paket

8-PowerTDFN

Gate Charge Qg Max Vgs

43nC @ 10V

Rise Time

7.8ns

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

16 Weeks

Case Connection

DRAIN

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Continuous Drain Current Id

100A

Uzunluk

4.9mm

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Ds Breakdown Voltagemin

60V

Turn On Delay Time

4.4 ns

REACH Uyumluluk Kodu

not_compliant

Temel Parça No

CSD18531

Kurşunsuz

Contains Lead

Montaj Tipi

Surface Mount

Power Dissipation Max

3.1W Ta 156W Tc

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

2.7 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Additional Feature

AVALANCHE RATED