Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Lifecycle Status
- ACTIVE (Last Updated: 4 days ago)
- Uzunluk
- 4.9mm
- Terminal Sayısı
- 5
- Drain To Source Voltage Vdss
- 40V
- Ds Breakdown Voltagemin
- 40V
- Element Configuration
- Single
- REACH Uyumluluk Kodu
- not_compliant
- Vgsth Max Id
- 2.4V @ 250μA
- Pin Sayısı
- 8
- JESD-609 Kodu
- e3
- Case Connection
- DRAIN
- Ambalaj
- Tape & Reel (TR)
- Pulsed Drain Currentmax Idm
- 237A
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Genişlik
- 6mm
- Kurşunsuz Kodu
- yes
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Kılıf / Paket
- 8-PowerTDFN
- Terminal Kaplaması
- Matte Tin (Sn)
- Gate Charge Qg Max Vgs
- 40nC @ 10V
- Transistor Element Material
- SILICON
- Terminal Formu
- NO LEAD
- Fabrika Tedarik Süresi
- 16 Weeks
- Fet Type
- N-Channel
- Additional Feature
- AVALANCHE RATED
- Drainsource On Resistancemax
- 0.0079Ohm
- ECCN Kodu
- EAR99
- Vgs Max
- ±20V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Seri
- NexFET™
- Thickness
- 1mm
- Rds On Max Id Vgs
- 7.9m Ω @ 15A, 10V
- Current Continuous Drain Id25
- 89A Tc
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- RoHS Durumu
- ROHS3 Compliant
- Yüzey Montaj
- YES
- Terminal Pozisyonu
- DUAL
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