CSD18510Q5B

Specifications

Vgsth Max Id

2.3V @ 250μA

Pin Sayısı

8

REACH Uyumluluk Kodu

not_compliant

Ds Breakdown Voltagemin

40V

Element Configuration

Single

Drain To Source Voltage Vdss

40V

Uzunluk

5mm

Terminal Sayısı

5

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Genişlik

6mm

Pulsed Drain Currentmax Idm

400A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Case Connection

DRAIN

JESD-609 Kodu

e4

Fet Type

N-Channel

Fabrika Tedarik Süresi

6 Weeks

Terminal Formu

NO LEAD

Transistor Element Material

SILICON

Gate Charge Qg Max Vgs

153nC @ 10V

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Kılıf / Paket

8-PowerTDFN

Feedback Capmax Crss

551 pF

Drain Currentmax Abs Id

42A

Drainsource On Resistancemax

0.0016Ohm

ECCN Kodu

EAR99

Additional Feature

AVALANCHE RATED

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

±20V

Input Capacitance Ciss Max Vds

11400pF @ 20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Current Continuous Drain Id25

300A Tc

Rds On Max Id Vgs

0.96m Ω @ 32A, 10V

Thickness

950μm

Seri

NexFET™

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Parça Durumu

Active