CSD18504Q5AT

Specifications

Fabrika Tedarik Süresi

8 Weeks

Transistor Element Material

SILICON

Gate Charge Qg Max Vgs

9.2nC @ 4.5V

Rise Time

6.8ns

Kılıf / Paket

8-PowerTDFN

Turn Off Delay Time

12 ns

REACH Uyumluluk Kodu

not_compliant

Turn On Delay Time

3.2 ns

Ds Breakdown Voltagemin

40V

Uzunluk

4.9mm

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Continuous Drain Current Id

75A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Case Connection

DRAIN

Parça Durumu

Active

Number Of Elements

1

Terminal Pozisyonu

DUAL

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Contact Plating

Tin

Avalanche Energy Rating Eas

92 mJ

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

±20V

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

1656pF @ 20V

Current Continuous Drain Id25

50A Ta

Rds On Max Id Vgs

6.6m Ω @ 17A, 10V

Thickness

1mm

Seri

NexFET™

Fet Type

N-Channel

Terminal Formu

NO LEAD

Feedback Capmax Crss

9.6 pF

Drain Currentmax Abs Id

15A

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Vgsth Max Id

2.4V @ 250μA

Pin Sayısı

8

Element Configuration

Single

Drain To Source Voltage Vdss

40V