CSD18504Q5A

Specifications

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

8 Weeks

Kılıf / Paket

8-PowerTDFN

Rise Time

6.8ns

Gate Charge Qg Max Vgs

19nC @ 10V

Turn Off Delay Time

12 ns

Radyasyon Dayanımı

No

Turn On Delay Time

3.2 ns

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Uzunluk

4.9mm

Continuous Drain Current Id

15A

Case Connection

DRAIN

Ambalaj

Cut Tape (CT)

Terminal Pozisyonu

DUAL

Number Of Elements

1

Drain To Source Breakdown Voltage

40V

Reach Svhc

No SVHC

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

92 mJ

Contact Plating

Tin

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

260

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Rds On Max Id Vgs

6.6m Ω @ 17A, 10V

Current Continuous Drain Id25

15A Ta 50A Tc

Input Capacitance Ciss Max Vds

1656pF @ 20V

Seri

NexFET™

Thickness

1mm

Fet Type

N-Channel

Max Junction Temperature Tj

150°C

ECCN Kodu

EAR99

Drain Currentmax Abs Id

50A

Feedback Capmax Crss

9.6 pF

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Vgsth Max Id

2.4V @ 250μA

Pin Sayısı

8

Terminal Sayısı

5