CSD18503KCS

Specifications

Thickness

4.58mm

Seri

NexFET™

Current Continuous Drain Id25

100A Tc

Rds On Max Id Vgs

4.5m Ω @ 75A, 10V

Input Capacitance Ciss Max Vds

3150pF @ 20V

Montaj

Through Hole

Gate To Source Voltage Vgs

20V

Vgs Max

±20V

Contact Plating

Tin

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Parça Durumu

Active

Drain To Source Breakdown Voltage

40V

Case Connection

DRAIN

Ambalaj

Tube

Continuous Drain Current Id

100A

Uzunluk

10.16mm

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Turn On Delay Time

5.7 ns

Radyasyon Dayanımı

No

Drainsource On Resistancemax

0.0068Ohm

Turn Off Delay Time

14 ns

Kılıf / Paket

TO-220-3

Gate Charge Qg Max Vgs

36nC @ 10V

Rise Time

5.3ns

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

6 Weeks

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

6.8 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Yükseklik

4.7mm

Temel Parça No

CSD18503

Kurşunsuz

Lead Free

Montaj Tipi

Through Hole

Power Dissipation Max

188W Tc

JESD-609 Kodu

e3

Power Dissipation

143W

Kurşunsuz Kodu

yes

Genişlik

8.7mm