CSD18502KCS

Specifications

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

12 Weeks

Kılıf / Paket

TO-220-3

Rise Time

7.3ns

Gate Charge Qg Max Vgs

62nC @ 10V

Turn Off Delay Time

33 ns

Turn On Delay Time

11 ns

REACH Uyumluluk Kodu

not_compliant

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Uzunluk

10.16mm

Ds Breakdown Voltagemin

40V

Continuous Drain Current Id

100A

Case Connection

DRAIN

Ambalaj

Tube

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

1

Reach Svhc

No SVHC

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

Non-RoHS Compliant

Nominal Vgs

1.8 V

Contact Plating

Tin

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Gate To Source Voltage Vgs

20V

Montaj

Through Hole

Rds On Max Id Vgs

2.9m Ω @ 100A, 10V

Current Continuous Drain Id25

100A Tc

Input Capacitance Ciss Max Vds

4680pF @ 20V

Seri

NexFET™

Thickness

4.58mm

Fet Type

N-Channel

ECCN Kodu

EAR99

Feedback Capmax Crss

26 pF

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Pin Sayısı

3

Vgsth Max Id

2.1V @ 250μA

Terminal Sayısı

3

Drain To Source Voltage Vdss

40V

Threshold Voltage

1.8V