CSD17579Q3A

Specifications

Avalanche Energy Rating Eas

14 mJ

Contact Plating

Copper, Tin

Number Of Elements

1

Terminal Pozisyonu

DUAL

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

20A Ta

Rds On Max Id Vgs

10.2m Ω @ 8A, 10V

Input Capacitance Ciss Max Vds

998pF @ 15V

Thickness

800μm

Seri

NexFET™

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

260

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Drainsource On Resistancemax

0.0142Ohm

Turn Off Delay Time

11 ns

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

6 Weeks

Kılıf / Paket

8-PowerVDFN

Gate Charge Qg Max Vgs

15nC @ 10V

Terminal Kaplaması

Matte Tin (Sn)

Rise Time

5ns

Continuous Drain Current Id

20A

Case Connection

DRAIN

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Turn On Delay Time

2 ns

Uzunluk

3.3mm

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Ds Breakdown Voltagemin

30V

Kurşunsuz

Lead Free

Montaj Tipi

Surface Mount

Power Dissipation Max

3.2W Ta 29W Tc

Temel Parça No

CSD17579

Fall Time Typ

1 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Drain Currentmax Abs Id

11A