CSD17576Q5B

Specifications

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Case Connection

DRAIN

Continuous Drain Current Id

100A

Ds Breakdown Voltagemin

30V

Uzunluk

5mm

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

REACH Uyumluluk Kodu

not_compliant

Turn On Delay Time

5 ns

Turn Off Delay Time

23 ns

Drainsource On Resistancemax

0.0029Ohm

Gate Charge Qg Max Vgs

68nC @ 10V

Rise Time

16ns

Kılıf / Paket

8-PowerTDFN

Fabrika Tedarik Süresi

8 Weeks

Transistor Element Material

SILICON

Thickness

950μm

Seri

NexFET™

Input Capacitance Ciss Max Vds

4430pF @ 15V

Current Continuous Drain Id25

100A Ta

Rds On Max Id Vgs

2m Ω @ 25A, 10V

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

±20V

Contact Plating

Gold

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Number Of Elements

1

Terminal Pozisyonu

DUAL

Power Dissipation

3.1W

Pulsed Drain Currentmax Idm

400A

JESD-609 Kodu

e4

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Genişlik

6mm

Element Configuration

Single

Drain To Source Voltage Vdss

30V