CSD17575Q3

Specifications

Continuous Drain Current Id

60A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Case Connection

DRAIN

REACH Uyumluluk Kodu

not_compliant

Turn On Delay Time

4 ns

Ds Breakdown Voltagemin

30V

Uzunluk

3.3mm

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Turn Off Delay Time

20 ns

Drainsource On Resistancemax

0.0032Ohm

Fabrika Tedarik Süresi

6 Weeks

Transistor Element Material

SILICON

Gate Charge Qg Max Vgs

30nC @ 4.5V

Rise Time

10ns

Kılıf / Paket

8-PowerTDFN

Input Capacitance Ciss Max Vds

4420pF @ 15V

Current Continuous Drain Id25

60A Ta

Rds On Max Id Vgs

2.3m Ω @ 25A, 10V

Thickness

1mm

Seri

NexFET™

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

±20V

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Contact Plating

Tin

Avalanche Energy Rating Eas

115 mJ

Parça Durumu

Active

Number Of Elements

1

Terminal Pozisyonu

DUAL

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Genişlik

3.3mm

Pulsed Drain Currentmax Idm

240A

JESD-609 Kodu

e3

Pin Sayısı

8

Vgsth Max Id

1.8V @ 250μA