CSD17570Q5B

Specifications

Continuous Drain Current Id

100A

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Case Connection

DRAIN

Turn On Delay Time

5 ns

REACH Uyumluluk Kodu

not_compliant

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Uzunluk

5mm

Turn Off Delay Time

144 ns

Drainsource On Resistancemax

0.00092Ohm

Fabrika Tedarik Süresi

8 Weeks

Transistor Element Material

SILICON

Terminal Kaplaması

Matte Tin (Sn)

Rise Time

36ns

Gate Charge Qg Max Vgs

121nC @ 4.5V

Kılıf / Paket

8-PowerTDFN

Input Capacitance Ciss Max Vds

13600pF @ 15V

Rds On Max Id Vgs

0.69m Ω @ 50A, 10V

Current Continuous Drain Id25

100A Ta

Seri

NexFET™

Thickness

950μm

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

±20V

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Avalanche Energy Rating Eas

450 mJ

Contact Plating

Gold

Drain To Source Breakdown Voltage

30V

Parça Durumu

Active

Terminal Pozisyonu

DUAL

Number Of Elements

1

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Genişlik

6mm

Kurşunsuz Kodu

yes

Pulsed Drain Currentmax Idm

360A

JESD-609 Kodu

e3

Pin Sayısı

8

Vgsth Max Id

1.9V @ 250μA