CSD17555Q5A

Specifications

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Discontinued

Terminal Pozisyonu

DUAL

Number Of Elements

1

Contact Plating

Tin

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

±20V

Seri

NexFET™

Thickness

1mm

Input Capacitance Ciss Max Vds

4650pF @ 15V

Rds On Max Id Vgs

2.7m Ω @ 25A, 10V

Current Continuous Drain Id25

24A Ta 100A Tc

Rise Time

18ns

Gate Charge Qg Max Vgs

28nC @ 4.5V

Kılıf / Paket

8-PowerTDFN

Transistor Element Material

SILICON

Radyasyon Dayanımı

No

Turn Off Delay Time

20 ns

Drainsource On Resistancemax

0.0034Ohm

Ds Breakdown Voltagemin

30V

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Uzunluk

4.9mm

Turn On Delay Time

14 ns

Ambalaj

Cut Tape (CT)

Case Connection

DRAIN

Continuous Drain Current Id

100A

Temel Parça No

CSD17555

Power Dissipation Max

3W Ta

Kurşunsuz

Contains Lead

Montaj Tipi

Surface Mount

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

5.3 ns

Fet Type

N-Channel

Additional Feature

AVALANCHE RATED

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99