Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS Durumu
- ROHS3 Compliant
- Operating Mode
- ENHANCEMENT MODE
- Nominal Vgs
- 1.6 V
- Number Of Elements
- 1
- Terminal Pozisyonu
- DUAL
- Parça Durumu
- Active
- Reach Svhc
- Unknown
- Drain To Source Breakdown Voltage
- 30V
- Contact Plating
- Tin
- Montaj
- Surface Mount
- Gate To Source Voltage Vgs
- 20V
- Vgs Max
- ±20V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Thickness
- 800μm
- Seri
- NexFET™
- Current Continuous Drain Id25
- 12A Tc
- Rds On Max Id Vgs
- 9m Ω @ 11A, 10V
- Input Capacitance Ciss Max Vds
- 1370pF @ 15V
- Kılıf / Paket
- 8-PowerVDFN
- Gate Charge Qg Max Vgs
- 7.8nC @ 4.5V
- Rise Time
- 24ns
- Transistor Element Material
- SILICON
- Fabrika Tedarik Süresi
- 12 Weeks
- Radyasyon Dayanımı
- No
- Turn Off Delay Time
- 12 ns
- Uzunluk
- 3.3mm
- Lifecycle Status
- ACTIVE (Last Updated: 4 days ago)
- Turn On Delay Time
- 8 ns
- Case Connection
- DRAIN
- Ambalaj
- Tape & Reel (TR)
- Continuous Drain Current Id
- 12A
- Number Of Channels
- 1
- Temel Parça No
- CSD17551
- Kurşunsuz
- Lead Free
- Montaj Tipi
- Surface Mount
- Power Dissipation Max
- 2.6W Ta
- Yükseklik
- 900μm
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Fall Time Typ
- 3.4 ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
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