CSD17510Q5A

Specifications

Drain To Source Breakdown Voltage

30V

Reach Svhc

No SVHC

Parça Durumu

Active

Terminal Pozisyonu

DUAL

Number Of Elements

1

Nominal Vgs

1.5 V

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Contact Plating

Tin

Avalanche Energy Rating Eas

45 mJ

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

±20V

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Input Capacitance Ciss Max Vds

1250pF @ 15V

Rds On Max Id Vgs

5.2m Ω @ 20A, 10V

Current Continuous Drain Id25

20A Ta 100A Tc

Seri

NexFET™

Thickness

1mm

Fabrika Tedarik Süresi

6 Weeks

Transistor Element Material

SILICON

Rise Time

11ns

Gate Charge Qg Max Vgs

8.3nC @ 4.5V

Kılıf / Paket

8-PowerTDFN

Turn Off Delay Time

9 ns

Drainsource On Resistancemax

0.0073Ohm

Radyasyon Dayanımı

No

Turn On Delay Time

7 ns

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Uzunluk

4.9mm

Continuous Drain Current Id

20A

Ambalaj

Tape & Reel (TR)

Pin Sayısı

8

Case Connection

DRAIN

Power Dissipation Max

3W Ta

Montaj Tipi

Surface Mount

Kurşunsuz

Contains Lead

Temel Parça No

CSD17510

Yükseklik

1.1mm

Çalışma Sıcaklığı

-55°C~150°C TJ