Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Continuous Drain Current Id
- 65A
- Ambalaj
- Tape & Reel (TR)
- Case Connection
- DRAIN
- Pin Sayısı
- 8
- Turn On Delay Time
- 4.7 ns
- Uzunluk
- 4.9mm
- Lifecycle Status
- ACTIVE (Last Updated: 5 days ago)
- Turn Off Delay Time
- 5.7 ns
- Radyasyon Dayanımı
- No
- Fabrika Tedarik Süresi
- 8 Weeks
- Transistor Element Material
- SILICON
- Gate Charge Qg Max Vgs
- 3.6nC @ 4.5V
- Rise Time
- 5.2ns
- Kılıf / Paket
- 8-PowerTDFN
- Input Capacitance Ciss Max Vds
- 530pF @ 15V
- Current Continuous Drain Id25
- 13A Ta 65A Tc
- Rds On Max Id Vgs
- 10.8m Ω @ 11A, 10V
- Thickness
- 1mm
- Seri
- NexFET™
- Tepe Reflow Sıcaklığı (°C)
- 260
- Vgs Max
- ±20V
- Montaj
- Surface Mount
- Gate To Source Voltage Vgs
- 20V
- Contact Plating
- Tin
- Parça Durumu
- Active
- Drain To Source Breakdown Voltage
- 30V
- Reach Svhc
- No SVHC
- Number Of Elements
- 1
- Terminal Pozisyonu
- DUAL
- Nominal Vgs
- 1.6 V
- RoHS Durumu
- ROHS3 Compliant
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kurşunsuz Kodu
- yes
- Genişlik
- 6mm
- Power Dissipation
- 3W
- JESD-609 Kodu
- e3
- Pin Sayısı
- 8
- Vgsth Max Id
- 2.1V @ 250μA
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