CSD17505Q5A

Specifications

Fabrika Tedarik Süresi

16 Weeks

Transistor Element Material

SILICON

Gate Charge Qg Max Vgs

13nC @ 4.5V

Rise Time

11.5ns

Kılıf / Paket

8-PowerTDFN

Turn Off Delay Time

15 ns

Drainsource On Resistancemax

0.0046Ohm

Radyasyon Dayanımı

No

Turn On Delay Time

8.3 ns

Uzunluk

4.9mm

Lifecycle Status

ACTIVE (Last Updated: 6 days ago)

Continuous Drain Current Id

100A

Ambalaj

Tape & Reel (TR)

Case Connection

DRAIN

Pin Sayısı

8

Parça Durumu

Active

Reach Svhc

No SVHC

Drain To Source Breakdown Voltage

30V

Number Of Elements

1

Terminal Pozisyonu

DUAL

Nominal Vgs

1.3 V

RoHS Durumu

Non-RoHS Compliant

Operating Mode

ENHANCEMENT MODE

Contact Plating

Tin

Avalanche Energy Rating Eas

290 mJ

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

±20V

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

1980pF @ 15V

Current Continuous Drain Id25

24A Ta 100A Tc

Rds On Max Id Vgs

3.5m Ω @ 20A, 10V

Thickness

1mm

Seri

NexFET™

Fet Type

N-Channel

Drain Currentmax Abs Id

24A

ECCN Kodu

EAR99

Additional Feature

AVALANCHE RATED

Pin Sayısı

8

Vgsth Max Id

1.8V @ 250μA