CSD17312Q5

Specifications

Vgs Max

+10V, -8V

Tepe Reflow Sıcaklığı (°C)

260

Montaj

Surface Mount

Gate To Source Voltage Vgs

10V

Current Continuous Drain Id25

38A Ta 100A Tc

Rds On Max Id Vgs

1.5m Ω @ 35A, 8V

Input Capacitance Ciss Max Vds

5240pF @ 15V

Thickness

1mm

Seri

NexFET™

Number Of Elements

1

Terminal Pozisyonu

DUAL

Parça Durumu

Active

Drain To Source Breakdown Voltage

30V

Reach Svhc

No SVHC

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Contact Plating

Gold

Turn On Delay Time

9.5 ns

Uzunluk

5mm

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Continuous Drain Current Id

100A

Case Connection

DRAIN

Pin Sayısı

8

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

12 Weeks

Kılıf / Paket

8-PowerTDFN

Gate Charge Qg Max Vgs

36nC @ 4.5V

Terminal Kaplaması

Matte Tin (Sn)

Rise Time

27ns

Drainsource On Resistancemax

0.0024Ohm

Turn Off Delay Time

35 ns

Radyasyon Dayanımı

No

Yükseklik

1.05mm

Fall Time Typ

23 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

3V 8V

Kurşunsuz

Contains Lead

Montaj Tipi

Surface Mount

Power Dissipation Max

3.2W Ta