Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Turn Off Delay Time
- 13.2 ns
- Kılıf / Paket
- 8-PowerTDFN
- Rise Time
- 9.9ns
- Gate Charge Qg Max Vgs
- 10nC @ 4.5V
- Transistor Element Material
- SILICON
- Fabrika Tedarik Süresi
- 12 Weeks
- Pin Sayısı
- 8
- Case Connection
- DRAIN
- Ambalaj
- Tape & Reel (TR)
- Continuous Drain Current Id
- 60A
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Uzunluk
- 3.3mm
- Turn On Delay Time
- 6.1 ns
- Contact Plating
- Tin
- Operating Mode
- ENHANCEMENT MODE
- RoHS Durumu
- ROHS3 Compliant
- Nominal Vgs
- 1.2 V
- Terminal Pozisyonu
- DUAL
- Number Of Elements
- 1
- Reach Svhc
- No SVHC
- Drain To Source Breakdown Voltage
- 30V
- Parça Durumu
- Active
- Seri
- NexFET™
- Thickness
- 1mm
- Rds On Max Id Vgs
- 5.4m Ω @ 18A, 8V
- Current Continuous Drain Id25
- 20A Ta 60A Tc
- Input Capacitance Ciss Max Vds
- 1440pF @ 15V
- Gate To Source Voltage Vgs
- 10V
- Montaj
- Surface Mount
- Vgs Max
- +10V, -8V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Additional Feature
- AVALANCHE RATED
- ECCN Kodu
- EAR99
- Drain Currentmax Abs Id
- 20A
- Feedback Capmax Crss
- 56 pF
- Fet Type
- N-Channel
- JESD-609 Kodu
- e3
- Power Dissipation
- 2.8W
- Genişlik
- 3.3mm
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