CSD17306Q5A

Specifications

Number Of Elements

1

Terminal Pozisyonu

DUAL

Parça Durumu

Active

Reach Svhc

No SVHC

Drain To Source Breakdown Voltage

30V

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Nominal Vgs

1.1 V

Contact Plating

Tin

Avalanche Energy Rating Eas

274 mJ

Vgs Max

+10V, -8V

Tepe Reflow Sıcaklığı (°C)

260

Montaj

Surface Mount

Gate To Source Voltage Vgs

10V

Current Continuous Drain Id25

24A Ta 100A Tc

Rds On Max Id Vgs

3.7m Ω @ 22A, 8V

Input Capacitance Ciss Max Vds

2170pF @ 15V

Thickness

1mm

Seri

NexFET™

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

16 Weeks

Kılıf / Paket

8-PowerTDFN

Gate Charge Qg Max Vgs

15.3nC @ 4.5V

Rise Time

13.1ns

Drainsource On Resistancemax

0.0054Ohm

Turn Off Delay Time

18.4 ns

Radyasyon Dayanımı

No

Turn On Delay Time

7.8 ns

Uzunluk

4.9mm

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Continuous Drain Current Id

100A

Case Connection

DRAIN

Pin Sayısı

8

Ambalaj

Tape & Reel (TR)

Kurşunsuz

Contains Lead

Montaj Tipi

Surface Mount

Power Dissipation Max

3.2W Ta

Temel Parça No

CSD17306

Yükseklik

1.1mm

Fall Time Typ

6.4 ns