CSD17303Q5

Specifications

Reach Svhc

No SVHC

Drain To Source Breakdown Voltage

30V

Parça Durumu

Active

Terminal Pozisyonu

DUAL

Number Of Elements

1

Nominal Vgs

1.1 V

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

Non-RoHS Compliant

Contact Plating

Tin

Avalanche Energy Rating Eas

530 mJ

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

+10V, -8V

Gate To Source Voltage Vgs

10V

Montaj

Surface Mount

Input Capacitance Ciss Max Vds

3420pF @ 15V

Rds On Max Id Vgs

2.4m Ω @ 25A, 8V

Current Continuous Drain Id25

32A Ta 100A Tc

Seri

NexFET™

Thickness

1mm

Fabrika Tedarik Süresi

6 Weeks

Transistor Element Material

SILICON

Rise Time

16ns

Gate Charge Qg Max Vgs

23nC @ 4.5V

Kılıf / Paket

8-PowerTDFN

Turn Off Delay Time

27 ns

Drainsource On Resistancemax

0.0037Ohm

Radyasyon Dayanımı

No

Turn On Delay Time

11.4 ns

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Uzunluk

5mm

Continuous Drain Current Id

100A

Ambalaj

Tape & Reel (TR)

Pin Sayısı

8

Case Connection

DRAIN

Power Dissipation Max

3.2W Ta

Kurşunsuz

Contains Lead

Montaj Tipi

Surface Mount

Temel Parça No

CSD17303

Yükseklik

1.05mm

Çalışma Sıcaklığı

-55°C~150°C TJ