CSD16407Q5C

Specifications

JESD-609 Kodu

e3

Power Dissipation

3.1W

Pulsed Drain Currentmax Idm

200A

Genişlik

6mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Qualification Status

Not Qualified

Transistor Application

SWITCHING

Terminal Sayısı

5

Drain To Source Voltage Vdss

25V

Element Configuration

Single

Vgsth Max Id

1.9V @ 250μA

Pin Sayısı

8

Additional Feature

AVALANCHE RATED

ECCN Kodu

EAR99

Terminal Formu

NO LEAD

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

9 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Yükseklik

1.05mm

Temel Parça No

CSD16407

Power Dissipation Max

3.1W Ta

Montaj Tipi

Surface Mount

Kurşunsuz

Contains Lead

Pin Sayısı

8

Case Connection

DRAIN

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Continuous Drain Current Id

100A

Lifecycle Status

NRND (Last Updated: 4 weeks ago)

Uzunluk

5mm

Ds Breakdown Voltagemin

25V

Turn On Delay Time

11.9 ns

Drainsource On Resistancemax

0.0033Ohm

Turn Off Delay Time

16 ns

Kılıf / Paket

8-PowerTDFN

Rise Time

18.4ns

Gate Charge Qg Max Vgs

18nC @ 4.5V

Transistor Element Material

SILICON

Seri

NexFET™