Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Fabrika Tedarik Süresi
- 12 Weeks
- Kılıf / Paket
- 8-PowerTDFN
- Rise Time
- 18.4ns
- Gate Charge Qg Max Vgs
- 18nC @ 4.5V
- Drainsource On Resistancemax
- 0.0033Ohm
- Turn Off Delay Time
- 16 ns
- Radyasyon Dayanımı
- No
- Turn On Delay Time
- 11.9 ns
- Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- Uzunluk
- 5mm
- Continuous Drain Current Id
- 100A
- Pin Sayısı
- 8
- Case Connection
- DRAIN
- Ambalaj
- Tape & Reel (TR)
- Terminal Pozisyonu
- DUAL
- Number Of Elements
- 1
- Reach Svhc
- No SVHC
- Drain To Source Breakdown Voltage
- 25V
- Parça Durumu
- Active
- Operating Mode
- ENHANCEMENT MODE
- RoHS Durumu
- ROHS3 Compliant
- Nominal Vgs
- 1.6 V
- Contact Plating
- Tin
- Vgs Max
- +16V, -12V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Gate To Source Voltage Vgs
- 16V
- Montaj
- Surface Mount
- Rds On Max Id Vgs
- 2.4m Ω @ 25A, 10V
- Current Continuous Drain Id25
- 31A Ta 100A Tc
- Input Capacitance Ciss Max Vds
- 2660pF @ 12.5V
- Seri
- NexFET™
- Thickness
- 1mm
- Dual Supply Voltage
- 25V
- Fet Type
- N-Channel
- ECCN Kodu
- EAR99
- Additional Feature
- AVALANCHE RATED
- Vgsth Max Id
- 1.9V @ 250μA
- Pin Sayısı
- 8
- Terminal Sayısı
- 5
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