CSD16403Q5A

Specifications

Avalanche Energy Rating Eas

224 mJ

Contact Plating

Tin

Number Of Elements

1

Terminal Pozisyonu

DUAL

Parça Durumu

Active

Reach Svhc

No SVHC

Drain To Source Breakdown Voltage

25V

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Nominal Vgs

1.6 V

Current Continuous Drain Id25

28A Ta 100A Tc

Rds On Max Id Vgs

2.8m Ω @ 20A, 10V

Input Capacitance Ciss Max Vds

2660pF @ 12.5V

Thickness

1mm

Seri

NexFET™

Vgs Max

+16V, -12V

Tepe Reflow Sıcaklığı (°C)

260

Montaj

Surface Mount

Gate To Source Voltage Vgs

16V

Drainsource On Resistancemax

0.0037Ohm

Turn Off Delay Time

15.2 ns

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

16 Weeks

Kılıf / Paket

8-PowerTDFN

Gate Charge Qg Max Vgs

18nC @ 4.5V

Rise Time

18.3ns

Continuous Drain Current Id

100A

Case Connection

DRAIN

Pin Sayısı

8

Ambalaj

Tape & Reel (TR)

Turn On Delay Time

11.8 ns

Uzunluk

4.9mm

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Kurşunsuz

Contains Lead

Montaj Tipi

Surface Mount

Power Dissipation Max

3.1W Ta

Terminal

SMD/SMT

Temel Parça No

CSD16403

Fall Time Typ

9.2 ns