CSD16327Q3

Specifications

Turn Off Delay Time

13 ns

Drainsource On Resistancemax

0.0065Ohm

Rise Time

15ns

Gate Charge Qg Max Vgs

8.4nC @ 4.5V

Kılıf / Paket

8-PowerTDFN

Fabrika Tedarik Süresi

12 Weeks

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Case Connection

DRAIN

Continuous Drain Current Id

22A

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Uzunluk

3.3mm

REACH Uyumluluk Kodu

not_compliant

Turn On Delay Time

5.3 ns

Contact Plating

Tin

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Drain To Source Breakdown Voltage

25V

Reach Svhc

Unknown

Parça Durumu

Active

Terminal Pozisyonu

DUAL

Number Of Elements

1

Seri

NexFET™

Thickness

1mm

Input Capacitance Ciss Max Vds

1300pF @ 12.5V

Rds On Max Id Vgs

4m Ω @ 24A, 8V

Current Continuous Drain Id25

60A Tc

Gate To Source Voltage Vgs

10V

Montaj

Surface Mount

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

+10V, -8V

Additional Feature

AVALANCHE RATED

Feedback Capmax Crss

65 pF

ECCN Kodu

EAR99

Drain Currentmax Abs Id

60A

Fet Type

N-Channel

Max Junction Temperature Tj

150°C

Terminal Formu

NO LEAD

Power Dissipation

2.8W