CSD16325Q5

Specifications

Montaj

Surface Mount

Gate To Source Voltage Vgs

10V

Vgs Max

+10V, -8V

Tepe Reflow Sıcaklığı (°C)

260

Thickness

1mm

Seri

NexFET™

Current Continuous Drain Id25

33A Ta 100A Tc

Rds On Max Id Vgs

2m Ω @ 30A, 8V

Input Capacitance Ciss Max Vds

4000pF @ 12.5V

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Nominal Vgs

1.1 V

Number Of Elements

1

Terminal Pozisyonu

DUAL

Parça Durumu

Active

Reach Svhc

No SVHC

Avalanche Energy Rating Eas

500 mJ

Uzunluk

5mm

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Turn On Delay Time

10.5 ns

Case Connection

DRAIN

Pin Sayısı

8

Ambalaj

Cut Tape (CT)

Continuous Drain Current Id

100A

Kılıf / Paket

8-PowerTDFN

Gate Charge Qg Max Vgs

25nC @ 4.5V

Terminal Kaplaması

Matte Tin (Sn)

Rise Time

16ns

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

6 Weeks

Radyasyon Dayanımı

No

Drainsource On Resistancemax

0.0027Ohm

Turn Off Delay Time

32 ns

Yükseklik

1.05mm

Drive Voltage Max Rds On Min Rds On

3V 8V

Fall Time Typ

12 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal

SMD/SMT

Temel Parça No

CSD16325

Kurşunsuz

Contains Lead