CSD16323Q3

Specifications

Current Continuous Drain Id25

21A Ta 60A Tc

Rds On Max Id Vgs

4.5m Ω @ 24A, 8V

Input Capacitance Ciss Max Vds

1300pF @ 12.5V

Thickness

1mm

Seri

NexFET™

Vgs Max

+10V, -8V

Tepe Reflow Sıcaklığı (°C)

260

Montaj

Surface Mount

Gate To Source Voltage Vgs

10V

Contact Plating

Tin

Number Of Elements

1

Terminal Pozisyonu

DUAL

Parça Durumu

Active

Reach Svhc

No SVHC

Drain To Source Breakdown Voltage

25V

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Nominal Vgs

1.1 V

Continuous Drain Current Id

60A

Case Connection

DRAIN

Pin Sayısı

8

Ambalaj

Tape & Reel (TR)

Turn On Delay Time

5.3 ns

Uzunluk

3.3mm

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Drainsource On Resistancemax

0.0065Ohm

Turn Off Delay Time

13 ns

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

6 Weeks

Kılıf / Paket

8-PowerTDFN

Gate Charge Qg Max Vgs

8.4nC @ 4.5V

Rise Time

15ns

Fall Time Typ

6.3 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

3V 8V

Yükseklik

1.1mm

Montaj Tipi

Surface Mount

Kurşunsuz

Contains Lead

Power Dissipation Max

3W Ta