CSD16321Q5C

Specifications

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Nominal Vgs

1.1 V

Terminal Pozisyonu

DUAL

Number Of Elements

1

Reach Svhc

No SVHC

Parça Durumu

Obsolete

Contact Plating

Tin

Gate To Source Voltage Vgs

10V

Montaj

Surface Mount

Vgs Max

+10V, -8V

Tepe Reflow Sıcaklığı (°C)

260

Seri

NexFET™

Thickness

1mm

Rds On Max Id Vgs

2.4m Ω @ 25A, 8V

Current Continuous Drain Id25

31A Ta 100A Tc

Input Capacitance Ciss Max Vds

3100pF @ 12.5V

Kılıf / Paket

8-PowerTDFN

Rise Time

15ns

Gate Charge Qg Max Vgs

19nC @ 4.5V

Transistor Element Material

SILICON

Radyasyon Dayanımı

No

Turn Off Delay Time

27 ns

Lifecycle Status

NRND (Last Updated: 4 weeks ago)

Uzunluk

5mm

Ds Breakdown Voltagemin

25V

Turn On Delay Time

9 ns

Pin Sayısı

8

Case Connection

DRAIN

Ambalaj

Tape & Reel (TR)

Continuous Drain Current Id

100A

Temel Parça No

CSD16321

Power Dissipation Max

3.1W Ta

Kurşunsuz

Contains Lead

Montaj Tipi

Surface Mount

Yükseklik

1.05mm

Drive Voltage Max Rds On Min Rds On

3V 8V

Fall Time Typ

17 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Fet Type

N-Channel