CSD13306W

Specifications

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Number Of Elements

1

Terminal Pozisyonu

BOTTOM

Contact Plating

Copper, Silver, Tin

Montaj

Surface Mount

Gate To Source Voltage Vgs

10V

Vgs Max

±10V

Thickness

2mm

Seri

NexFET™

Input Capacitance Ciss Max Vds

1370pF @ 6V

Current Continuous Drain Id25

3.5A Ta

Rds On Max Id Vgs

10.2m Ω @ 1.5A, 4.5V

Gate Charge Qg Max Vgs

11.2nC @ 4.5V

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Rise Time

11ns

Kılıf / Paket

6-UFBGA, DSBGA

Fabrika Tedarik Süresi

6 Weeks

Transistor Element Material

SILICON

Turn Off Delay Time

20 ns

Drainsource On Resistancemax

0.0155Ohm

Ds Breakdown Voltagemin

12V

Uzunluk

1.5mm

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Turn On Delay Time

7 ns

Ambalaj

Tape & Reel (TR)

Continuous Drain Current Id

3.5A

Temel Parça No

CSD13306

Kurşunsuz

Lead Free

Montaj Tipi

Surface Mount

Power Dissipation Max

1.9W Ta

Yükseklik

1mm

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

8 ns

Fet Type

N-Channel

Terminal Formu

BALL

Additional Feature

ULTRA LOW RESISTANCE

Feedback Capmax Crss

294 pF