CSD13201W10

Specifications

Turn On Delay Time

3.9 ns

Uzunluk

0m

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Continuous Drain Current Id

1.6A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

6 Weeks

Kılıf / Paket

4-UFBGA, DSBGA

Gate Charge Qg Max Vgs

2.9nC @ 4.5V

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Rise Time

5.9ns

Drainsource On Resistancemax

0.053Ohm

Turn Off Delay Time

14.4 ns

Vgs Max

±8V

Tepe Reflow Sıcaklığı (°C)

260

Montaj

Surface Mount

Gate To Source Voltage Vgs

8V

Current Continuous Drain Id25

1.6A Ta

Rds On Max Id Vgs

34m Ω @ 1A, 4.5V

Input Capacitance Ciss Max Vds

462pF @ 6V

Thickness

650μm

Seri

NexFET™

Number Of Elements

1

Terminal Pozisyonu

BOTTOM

Parça Durumu

Active

Drain To Source Breakdown Voltage

12V

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Contact Plating

Copper, Silver, Tin

Pin Sayısı

4

Vgsth Max Id

1.1V @ 250μA

Terminal Sayısı

4

Element Configuration

Single

Kurşunsuz Kodu

yes

Genişlik

0m

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e1

Power Dissipation

1.2W