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Texas Instruments

2N5461

JFETs Transistors

RoHS: Compliant

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Specifications

Max Power Dissipation
350mW
Continuous Drain Current Id
5.5 mA
Input Capacitance
7pF
Uzunluk
6.4 mm
Parça Durumu
Obsolete
Genişlik
4.19mm
RoHS Durumu
Non-RoHS Compliant
Voltage Rated Dc
10V
Nem Hassasiyeti (MSL)
1 (Unlimited)
RoHS
Non-Compliant
Gate To Source Voltage Vgs
40V
Element Configuration
Single
Ürün Durumu
Active
Tolerans
2 %
Voltage Breakdown Vbrgss
40V
Montaj
Through Hole
Akım Değeri
10 mA
Direnç
680 kΩ
Voltage Rating Dc
10 V
Current Drain Idss Vds Vgs0
2mA @ 15V
Terminal
Axial
Paket
Bulk
Ambalaj
Bulk
Lifecycle Status
OBSOLETE (Last Updated: 1 week ago)
Breakdown Voltage V
40 V
Power Max
350mW
Input Capacitance Ciss Max Vds
7pF @ 15V
Yükseklik
5.33mm
Reach Svhc
No SVHC
Weight
201mg
Min. Çalışma Sıcaklığı
-55°C
Kurşunsuz
Lead Free
Fet Type
P-Channel
Maks. Çalışma Sıcaklığı
150°C
Drain To Source Voltage Vdss
40 V
Temel Parça No
2N5461
Seri
*
Montaj Tipi
Through Hole
Power Dissipation
350 mW
Military Standard
MIL-R-39017

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