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C3 ChipZentronix

Taiwan Semiconductor

BC338-16-B0 A1

Single BJT Transistors

RoHS: Compliant

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Specifications

Maks. Çalışma Sıcaklığı
+ 175 C
Clamping Voltage
504 V
Number Of Channels
1 Channel
Terminal Stili
Axial
Dc Current Gain Hfe Min Ic Vce
250 @ 100mA, 5V
Ürün Durumu
Obsolete
Ambalaj
Bulk
Current Collector Cutoff Max
100nA (ICBO)
Paket
Tape & Box (TB)
Vesd Voltage Esd Contact
30 kV
Ürün Tipi
TVS Diodes
Tedarikçi Cihaz Paketi
TO-92
Voltage Collector Emitter Breakdown Max
25 V
Vce Saturation Max Ib Ic
700mV @ 50mA, 500mA
Pppm Peak Pulse Power Dissipation
400 W
Ipp Peak Pulse Current
800 mA
Kılıf / Paket
DO-41-2
Çalışma Sıcaklığı
-55°C ~ 150°C (TJ)
Fabrika Paket Adedi
1000
Birim Ağırlık
0.011852 oz
Transistor Type
NPN
Power Max
625 mW
Frequency Transition
100MHz
Vesd Voltage Esd Air Gap
30 kV
Currentcollector Ic Max
800 mA
RoHS
Details
Breakdown Voltage V
315 V
Polarity
Bidirectional
Working Voltage
284 V
Montaj Tipi
Through Hole
Minimum Operating Temperature
- 65 C

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