Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Avalanche Energy Rating Eas
- 2400 mJ
- Gate Charge Qg Max Vgs
- 363nC @ 10V
- Montaj
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 1
- Fet Type
- N-Channel
- Seri
- MDmesh™ V
- Operating Mode
- ENHANCEMENT MODE
- Drive Voltage Max Rds On Min Rds On
- 10V
- Number Of Channels
- 1
- Current Continuous Drain Id25
- 130A Tc
- RoHS Durumu
- ROHS3 Compliant
- Fall Time Typ
- 37 ns
- Contact Plating
- Tin
- Çalışma Sıcaklığı
- 150°C TJ
- Pin Sayısı
- 247
- Turn Off Delay Time
- 295 ns
- Genişlik
- 5.3mm
- Pulsed Drain Currentmax Idm
- 520A
- Direnç
- 17mOhm
- Radyasyon Dayanımı
- No
- Yükseklik
- 24.6mm
- Kurşunsuz
- Lead Free
- Vgs Max
- ±25V
- Jesd30 Code
- R-PSIP-T3
- ECCN Kodu
- EAR99
- Element Configuration
- Single
- Drain To Source Breakdown Voltage
- 650V
- Fabrika Tedarik Süresi
- 12 Weeks
- Vgsth Max Id
- 5V @ 250μA
- Transistor Application
- SWITCHING
- Max Junction Temperature Tj
- 150°C
- Continuous Drain Current Id
- 130A
- Kılıf / Paket
- TO-247-3
- Uzunluk
- 15.9mm
- Terminal Sayısı
- 3
- Turn On Delay Time
- 295 ns
- Transistor Element Material
- SILICON
- Montaj Tipi
- Through Hole
- Lifecycle Status
- ACTIVE (Last Updated: 7 months ago)
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